Q-pole-SIMS

PHI ADEPT 2

Quadrupole Secondary Ion Mass Spectrometer

  • Advanced Automated Measurement
  • High-Speed, High-Sensitivity Depth Profiling
  • Ultimate Depth Resolution
  • Ultimate Detection Limits Achieved by Ultra-High Vacuum
PHI ADEPT 2
Overview

概要

Quadrupole Secondary Ion Mass Spectrometry(Q-pole-SIMS)is a highly sensitive analysis technique for in-depth distribution of elements, providing outstanding performance for ultra-fast depth profiling.

Using a high transmission quadrupole mass analyzer and field-proven low energy primary ion guns, the ADEPT 2 is the prominent apparatus for analysis of dopants and impurities in thin films and devices.

Next-Generation Design

次世代設計とハードウェアの特長

The ADEPT 2 is the next-generation dynamic SIMS instrument from ULVAC-PHI, designed to meet the evolving challenges in advanced semiconductor devices. Building on the proven foundation of the ADEPT-1010, the ADEPT 2 introduces key hardware and software enhancements to improve sensitivity, resolution, and automation—making it an ideal tool for both development and high-throughput manufacturing environments.

Newly designed columns for both Cs+h and O2+ ion sources, enabling higher ion beam brightness and optimized performance across a wider range of materials. Reduced working distance between lens and sample improves focusing, resulting in a smaller beam diameter and more precise crater formation.

Optional ICP oxygen plasma source delivers higher ion current, increased source lifetime and beam stability compared to traditional Duoplasmatron sources, improving dynamic range.
New high mass detection capabilities allows for analysis of large clusters such as CsM+ and Cs2M+.

Control Software

制御ソフトウェア(SmartSoft-SIMS)

SmartSoft-SIMS Operation Screen

SmartSoft-SIMS Instrument Control Software Operation Screen

SmartSoft-SIMS instrument control software provides a modern, intuitive interface for streamlined multi-point analysis and automation.
With its advanced ion optics and control capabilities, the ADEPT 2 continues the tradition of high-precision SIMS analysis while expanding its capability to meet the needs of next-generation semiconductor devices.

CONTACT

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